The rapid evolution of technology in the field of semiconductors offers both exciting potential and challenges, especially when considering the harsh environments encountered in space. In a groundbreaking new study, Dr. Jae Hwa Seo and his team at the Advanced Semiconductor Research Center of Korea Electrotechnology Research Institute (KERI) have developed innovative methods to evaluate the radiation resistance of silicon carbide (SiC) power semiconductor devices. This research not only enhances our understanding of semiconductor behavior in extreme conditions but is poised to significantly advance the reliability of power electronic systems critical to space exploration.
SiC power semiconductors are gaining traction in various applications due to their exceptional performance characteristics. Unlike traditional silicon (Si) semiconductors, SiC devices are capable of withstanding much higher voltages and temperatures, making them especially valuable in applications where efficiency and performance are paramount. While silicon has traditionally dominated the semiconductor market, the superior attributes of SiC, including their ability to operate in environments with extreme conditions, are creating a paradigm shift in the industry. These materials have the potential to revolutionize sectors such as aerospace, automotive, and energy production.
Fundamentally, power semiconductors act as the "muscles" within electrical devices, enabling control over current flow and power conversion. As the demand for increased efficiency and reliability in these applications rises, the exploration of wide bandgap (WBG) semiconductors, such as SiC and gallium nitride (GaN), has intensified. With their broader bandgap, SiC semiconductors not only outperform silicon in terms of efficiency but also deliver significant advantages in power handling, reliability, and operational longevity -- key factors for the demanding conditions of space.
However, the challenges posed by space radiation represent a significant obstacle. High-energy particles bombard electronics in space, leading to degradation of material properties and functionality over time. This phenomenon has been a considerable concern for satellites, spacecraft, and various exploration vehicles, where maintaining operational integrity is critical. Although there has been substantial research in radiation effects in the United States and Europe, Korea's previous academic focus has been rather limited to the quantitative aspects associated with silicon-based devices.
In a pioneering effort, Dr. Seo's research team incorporated Korea's first high-energy space environment simulation to assess the radiation resistance of SiC power semiconductors. To create an authentic simulation of space conditions, the researchers needed to understand the unique characteristics of space radiation, primarily consisting of protons (80-90% of the particles). By utilizing high-energy protons sourced from the accelerator facility at the Korea Atomic Energy Research Institute, and in partnership with experts from Andong National University, they meticulously recreated precise radiation exposure conditions to study the effects on the semiconductors.
Throughout the experimental process, KERI's researchers collected data on several crucial metrics, including voltage fluctuations, increases in leakage current, and lattice damage due to exposure. These factors are essential for creating precise design criteria, aimed at ensuring the long-term reliability of SiC power semiconductor devices in space applications. The outcomes of this rigorous study were commended with a publication in the prestigious journal Radiation Physics and Chemistry, which highlights the significance of their achievement within the scientific community.
Dr. Seo emphasized the importance of establishing various radiation effect parameters and simulating them effectively. According to him, such capabilities represent a vital technology within the global space industry, underscoring Korea's commitment to advancing its capacity in aerospace technologies. He expressed optimism for the application of their research across several fields, ranging from aerospace to medical radiation equipment and even military electronics.
This research initiative aligns with KERI's broader goals, which include undertaking comprehensive evaluations of SiC power semiconductors under severe radiation conditions. The research team's aspirations extend beyond current capabilities as they aim to explore ultra-high energy radiation conditions exceeding 200MeV. Additionally, they are investigating the semiconductor properties of diamond, a material that offers the most favorable characteristics for high-performance applications. This exploration is facilitated through collaborations with both local entities, such as Gyeongnam Province, and international partners like the Japanese company 'Orbray'.
The implications of these research endeavors will resonate throughout Korea's high-value-added aerospace industry. By developing reliable SiC power semiconductors capable of thriving in extreme radiation environments, researchers are paving the way for the next generation of space exploration vehicles and systems designed to withstand the rigors of space radiation. Such advancements could help maintain the integrity of power electronics in future missions, ensuring that spacecraft and satellites operate efficiently over extended lifespans.
As Korea continues to invest in semiconductor research and innovation, the potential benefits of this work extend beyond national interests. There is a growing recognition that the advancements made here could influence global markets and international collaborations, moving towards a future where semiconductor technologies can drive breakthroughs in various sectors.
In conclusion, Dr. Jae Hwa Seo and his team at KERI are not just conducting focused research on SiC semiconductors, but are contributing to a larger narrative surrounding the essential role of advanced materials in modern civilization. Their work highlights the intricate relationship between technology and the extreme environments encountered in space, illustrating the complex challenges and solutions that researchers face in the quest for broader, more reliable applications in cutting-edge technology.
Subject of Research: Radiation Resistance of SiC Power Semiconductor Devices in Space Environments
Article Title: Degeneration mechanism of 30 MeV and 100 MeV proton irradiation effects on 1.2 kV SiC MOSFETs
News Publication Date: 1-Feb-2025
Web References: KERI Website
References: DOI link - 10.1016/j.radphyschem.2024.112378
Image Credits: Korea Electrotechnology Research Institute
Silicon Carbide, Power Semiconductors, Space Radiation, Reliability, Technology Evaluation, High-energy Protons, Wide Bandgap Semiconductors, Aerospace Applications, Research Innovation, KERI.